PART |
Description |
Maker |
BC850CL BC849CL |
16Mb EDO/FPM - OBSOLETE TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五(巴西)总裁| 100mA的一(c)| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
KMM53616000BK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
KMM53632000CK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
MT4LC1M16C3TG-6S MT4LC1M16C3DJ-6S |
FPM DRAM 快速页面模式的DRAM
|
Micron Technology, Inc.
|
UNO-PCM21 UNO-PCM22 UNO-FPM21 UNO-FPM21-AE |
UNO & FPM integration kit
|
Advantech Co., Ltd. http://
|
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 50 ns, PDSO44 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165TT |
16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 70 ns, PDSO50
|
ELPIDA MEMORY INC
|